- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
25,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||||
|
|
4,665
In-stock
|
Diodes Incorporated | MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 7.9 A | 80 mOhms | 1 V | 5.8 nC | Enhancement | ||||
|
|
3,023
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | 20 V | SMD/SMT | SOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 2.5 A | 150 mOhms | 1 V | 5.8 nC | Enhancement | ||||
|
|
25,000
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 90mA SOT-89-3 | 20 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 90 mA | 28 Ohms | 1.3 V | 5.8 nC | Enhancement | ||||
|
|
8,369
In-stock
|
Texas instruments | MOSFET N-Ch NexFET Power MOSFETs | 16 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 5.9 mOhms | 1.7 V | 5.8 nC | Enhancement | NexFET |
