- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,774
In-stock
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Infineon Technologies | MOSFET MOSFT P-Ch -2.3A 200mOhm 5.8nC LogLvl | 12 V | SMD/SMT | TSOP-6 | Reel | 1 Channel | Si | P-Channel | - 20 V | - 2.3 A | 200 mOhms | 5.8 nC | ||||||||
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7,570
In-stock
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Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -12V 8Vgss | 8 V | SMD/SMT | X2-DFN1010-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 12 V | - 2 A | 70 mOhms | - 350 mV | 5.8 nC | Enhancement | ||||
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2,528
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 12 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 7.5 A | 22 mOhms | 700 mV | 5.8 nC | Enhancement | ||||
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690
In-stock
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Texas instruments | MOSFET 20V PCh NexFET Pwr MOSFET | - 6 V | SMD/SMT | DSBGA-9 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 20 V | - 4 A | 40 mOhms | - 0.75 V | 5.8 nC | NextFET |
