- Manufacture :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
6,583
In-stock
|
onsemi | MOSFET NCH+NCH 10A 24V 2.5V DRIV | 10 V | SMD/SMT | WLCSP-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 20 V | 10 A | 13.3 mOhms | 500 mV to 1.3 V | 19.8 nC | ||||
|
|
1,041
In-stock
|
Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40 TSOT23,3K | 12 V | SMD/SMT | TSOT-26-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 3.9 A | 75 mOhms | 19.8 nC | Enhancement |
