- Mounting Style :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26,553
In-stock
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Fairchild Semiconductor | MOSFET SC89-6 COMP NCH & PCH POWER T | 12 V, 8 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 600 mA | 700 mOhms, 1.2 Ohms | Enhancement | PowerTrench | ||||||
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9,090
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||||
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2,842
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | Enhancement | |||||||
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6,773
In-stock
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IR / Infineon | MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 600 mA | 2.2 Ohms | 3.9 nC | Enhancement | ||||||
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2,550
In-stock
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Diodes Incorporated | MOSFET N-Chnl 100V | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 100 V | 600 mA | 4.5 Ohms | Enhancement | |||||||
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4,002
In-stock
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Fairchild Semiconductor | MOSFET 20V Sgl N-Chl 2.5V Spec PwrTrch MOSFET | 12 V | SMD/SMT | SOT-523F-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 600 mA | 240 mOhms | Enhancement | PowerTrench | ||||||
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320
In-stock
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IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | |||||||
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1,361
In-stock
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onsemi | MOSFET NCH 0.6A 250V SOT-89 | 10 V | SMD/SMT | SOT-89-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 600 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | |||||
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1,731
In-stock
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Diodes Incorporated | MOSFET Avalanche | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||||
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9,935
In-stock
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Diodes Incorporated | MOSFET 20V N-Ch Enh FET 8 VGS 52.5pF 0.88nC | 8 V | SMD/SMT | X2-DFN0806-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 600 mA | 450 mOhms | 1 V | 0.88 nC | Enhancement | |||||
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444
In-stock
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Diodes Incorporated | MOSFET N-Chnl 60V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 60 V | 600 mA | 1.5 Ohms | 3 V | Enhancement | ||||||
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62
In-stock
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IXYS | MOSFET 0.6 Amps 1200V 32 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 600 mA | 30 Ohms | Enhancement | |||||||
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20,000
In-stock
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Nexperia | MOSFET Trench Mosfet 20V, N-channel | 8 V | SMD/SMT | DFN1006-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 600 mA | 470 mOhms | 450 mV | 0.4 nC | Enhancement |