- Vgs - Gate-Source Voltage :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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67,313
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
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32,671
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.7 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
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4,150
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 20 A | 7.7 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
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5,044
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | ||||
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1,944
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 50A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 50 A | 7.8 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
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GET PRICE |
24,170
In-stock
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Infineon Technologies | MOSFET P-Ch -30V -40A TSDSON-8 OptiMOS P3 | +/- 25 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 30 V | - 40 A | 9 mOhms | - 3.1 V | 45 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.2 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS |