- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
4 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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507
In-stock
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IXYS | MOSFET 500V 16A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | Enhancement | HyperFET | |||
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150
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 16 A | 950 mOhms | Enhancement | HyperFET | |||
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40
In-stock
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IXYS | MOSFET Polar3 HiPerFET Power MOSFET | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 360 mOhms | HyperFET | |||||||
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VIEW | IXYS | MOSFET 16 Amps 900V 0.65 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 16 A | 650 mOhms | Enhancement | HyperFET |