- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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- Rds On - Drain-Source Resistance :
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- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
170 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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180
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450
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57
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120
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In-stock
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IXYS | MOSFET 600V 48A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 48 A | 135 mOhms | Enhancement | HyperFET | |||||
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60
In-stock
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IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 150 mOhms | Enhancement | HyperFET | |||||
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62
In-stock
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IXYS | MOSFET DIODE Id36 BVdass600 | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 105 mOhms | Enhancement | HyperFET | |||||
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45
In-stock
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IXYS | MOSFET 600V 20A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 20 A | 200 mOhms | Enhancement | HyperFET | |||||
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110
In-stock
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IXYS | MOSFET 500V 36A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 19 A | 190 mOhms | Enhancement | HyperFET | |||||
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20
In-stock
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IXYS | MOSFET 600V 38A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 38 A | 130 mOhms | Enhancement | HyperFET | |||||
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34
In-stock
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IXYS | MOSFET 600V 44A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 44 A | 130 mOhms | 4.5 V | 330 nC | Enhancement | HyperFET | |||
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100
In-stock
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IXYS | MOSFET 600V 14A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 550 mOhms | Enhancement | HyperFET | |||||
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45
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | 3 V to 6 V | 97 nC | Enhancement | HyperFET | |||
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30
In-stock
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IXYS | MOSFET 16 Amps 1200V 1 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 9 A | 1.04 Ohms | Enhancement | HyperFET | |||||
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130
In-stock
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IXYS | MOSFET 600V 30A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 30 A | 240 mOhms | Enhancement | HyperFET | |||||
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20
In-stock
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IXYS | MOSFET Polar HiPerFETs MOSFET w/Fast Diode | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 32 A | 300 mOhms | 3.5 V to 6.5 V | 215 nC | Enhancement | HyperFET | |||
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90
In-stock
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IXYS | MOSFET 600V 30A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 15 A | 250 mOhms | Enhancement | HyperFET |
