- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 600V 120MA SOT223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | N-Channel | Depletion Mode | 600V | 120mA (Ta) | 45 Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | 146pF @ 25V | 0V, 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 4000 | N-Channel | - | 60V | 2.9A (Tj) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 9.3nC @ 7V | 340pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 250V 100MA SOT223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 6000 | N-Channel | Depletion Mode | 250V | 100mA (Ta) | 14 Ohm @ 100mA, 10V | 1V @ 56µA | 3.5nC @ 5V | 76pF @ 25V | 0V, 10V | ±20V | 360mW (Ta) |
