- Operating Temperature :
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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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2,500
In-stock
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onsemi | MOSFET N-CH 100V 44A DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, UltraFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252AA | 22500 | 2500 | N-Channel | - | 100V | 44A (Tc) | 47 mOhm @ 21A, 6V | 4V @ 250µA | 36nC @ 10V | 1635pF @ 25V | 6V, 10V | ±20V | 144W (Tc) | ||||
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VIEW | onsemi | MOSFET 2N-CH 60V 5.1A 8-SO | 8-SOIC (0.154", 3.90mm Width) | Automotive, AEC-Q101, UltraFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 2.5W | Logic Level Gate | 60V | 5.1A | 49 mOhm @ 5.1A, 10V | 3V @ 250µA | 23nC @ 10V | 620pF @ 25V | |||||||
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VIEW | onsemi | MOSFET 2N-CH 60V 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | Automotive, AEC-Q101, UltraFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | 8-SOIC | 0 | 2500 | 2 N-Channel (Dual) | 2.5W | Logic Level Gate | 60V | - | 90 mOhm @ 3.8A, 10V | 3V @ 250µA | 11.2nC @ 10V | 330pF @ 25V |
