- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 150V 4.9A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MZ | 0 | 1000 | N-Channel | - | 150V | 4.9A (Ta), 28A (Tc) | 56 mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | 1411pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 6.2A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MZ | 0 | 1000 | N-Channel | - | 150V | 6.2A (Ta), 35A (Tc) | 34.5 mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55nC @ 10V | 2340pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | 3-WDSON | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | MG-WDSON-2, CanPAK M™ | 0 | 5000 | N-Channel | - | 150V | 9A (Ta), 30A (Tc) | 28 mOhm @ 30A, 10V | 4V @ 60µA | 21nC @ 10V | 1600pF @ 75V | 10V | ±20V | 2.8W (Ta), 57W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 150V 9A WDSON-2 | 3-WDSON | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | MG-WDSON-2, CanPAK M™ | 0 | 5000 | N-Channel | - | 150V | 9A (Ta), 45A (Tc) | 16.5 mOhm @ 30A, 10V | 4V @ 110µA | 35nC @ 10V | 2800pF @ 75V | 8V, 10V | ±20V | 2.8W (Ta), 78W (Tc) | |||
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4,800
In-stock
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Infineon Technologies | MOSFET N-CH 150V 6.2A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MZ | 0 | 4800 | N-Channel | - | 150V | 6.2A (Ta), 35A (Tc) | 34.5 mOhm @ 7.6A, 10V | 4.9V @ 150µA | 55nC @ 10V | 2340pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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4,800
In-stock
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Infineon Technologies | MOSFET N-CH 150V 4.9A DIRECTFET | DirectFET™ Isometric MZ | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MZ | 0 | 4800 | N-Channel | - | 150V | 4.9A (Ta), 28A (Tc) | 56 mOhm @ 5.6A, 10V | 5V @ 100µA | 36nC @ 10V | 1411pF @ 25V | 10V | ±20V | 2.8W (Ta), 89W (Tc) |
