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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Infineon Technologies MOSFET 2P-CH 20V 9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 0 1 2 P-Channel (Dual) 2W Logic Level Gate 20V 9A 18 mOhm @ 9A, 4.5V 1V @ 250µA 63nC @ 5V 2940pF @ 15V
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Infineon Technologies MOSFET 2P-CH 20V 9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 0 95 2 P-Channel (Dual) 2W Logic Level Gate 20V 9A 18 mOhm @ 9A, 4.5V 1V @ 250µA 63nC @ 5V 2940pF @ 15V
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Per Unit
$0.239
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onsemi MOSFET 2N-CH 24V 9A ECH8 8-SMD, Flat Lead - Tape & Reel (TR) Surface Mount 150°C (TJ) Active 8-ECH 30000 0 3000 2 N-Channel (Dual) 1.5W Logic Level Gate 24V 9A 17 mOhm @ 4.5A, 4.5V - 16.8nC @ 10V -
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Per Unit
$0.214
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Diodes Incorporated MOSFET 2N-CH 20V 9A 6-UDFN 6-UFDFN Exposed Pad - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN2030-6 (Type B) 0 0 3000 2 N-Channel (Dual) 800mW Logic Level Gate 20V 9A 13 mOhm @ 4A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1550pF @ 10V
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Per Unit
$0.822
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RFQ
Infineon Technologies MOSFET 2P-CH 20V 9A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 0 4000 2 P-Channel (Dual) 2W Logic Level Gate 20V 9A 18 mOhm @ 9A, 4.5V 1V @ 250µA 63nC @ 5V 2940pF @ 15V
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Per Unit
$0.171
RFQ
3,000
In-stock
onsemi MOSFET 2N-CH 24V 9A EMH8 8-SMD, Flat Lead - Tape & Reel (TR) Surface Mount 150°C (TJ) Active SOT-383FL, EMH8 252000 0 3000 2 N-Channel (Dual) Common Drain 1.3W Logic Level Gate, 2.5V Drive 24V 9A 15 mOhm @ 4A, 4.5V 1.3V @ 1mA 4.4nC @ 4.5V -
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