- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- FET Feature :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET 2N-CH 40V 50A 8PQFN | 8-PowerTDFN | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PQFN (5x6) | 0 | 4000 | 2 N-Channel (Dual) | 50W | Standard | 40V | 50A | 5.9 mOhm @ 40A, 10V | 3.9V @ 50µA | 60nC @ 10V | 2250pF @ 25V | |||
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VIEW | Texas instruments | MOSFET 2N-CH 25V 50A 8SON | 8-PowerLDFN | NexFET™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-LSON (5x6) | 0 | 2500 | 2 N-Channel (Half Bridge) | 13W | Logic Level Gate | 25V | 50A | - | 2.1V @ 250µA | 12.6nC @ 4.5V | 2060pF @ 12.5 |
