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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds
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Diodes Incorporated MOSFET 2N-CH 40V 5.2A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 2 N-Channel (Dual) 1.42W Standard 40V 5.2A 31 mOhm @ 6A, 10V 3V @ 250µA 18.6nC @ 10V 945pF @ 20V
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Infineon Technologies MOSFET 2P-CH 20V 5.2A 8SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Cut Tape (CT) Surface Mount -55°C ~ 175°C (TJ) Obsolete 8-SO 0 1 2 P-Channel (Dual) 2.4W Logic Level Gate 20V 5.2A 58 mOhm @ 5.2A, 4.5V 700mV @ 250µA 29nC @ 4.5V 913pF @ 15V
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Infineon Technologies MOSFET 2N-CH 20V 5.2A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 3800 2 N-Channel (Dual) 2W Logic Level Gate 20V 5.2A 50 mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V
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Per Unit
$0.210
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Diodes Incorporated MOSFET 2N-CH 20V 5.2A 8TSSOP 8-TSSOP (0.173", 4.40mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-TSSOP 0 2500 2 N-Channel (Dual) Common Drain 1W Logic Level Gate 20V 5.2A 23 mOhm @ 6.5A, 4.5V 950mV @ 250µA 8.8nC @ 4.5V 143pF @ 10V
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Per Unit
$0.270
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Diodes Incorporated MOSFET 2N-CH 20V 5.2A 8UDFN 8-PowerUDFN - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active U-DFN3030-8 0 3000 2 N-Channel (Dual) Common Drain 770mW Logic Level Gate 20V 5.2A 18 mOhm @ 6A, 4.5V 1.1V @ 250µA 16nC @ 4.5V 1472pF @ 10V
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Per Unit
$0.262
RFQ
2,500
In-stock
Diodes Incorporated MOSFET 2N-CH 40V 5.2A 8SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 2 N-Channel (Dual) 1.42W Logic Level Gate 40V 5.2A 31 mOhm @ 6A, 10V 3V @ 250µA 18.6nC @ 10V 945pF @ 20V
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