- Manufacture :
- Supplier Device Package :
- FET Type :
- FET Feature :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
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VIEW | Infineon Technologies | MOSFET 2N-CH 100V 2.3A 8PQFN | 8-PowerVDFN | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-PQFN (3.3x3.3), Power33 | 0 | 4000 | 2 N-Channel (Dual) | 2.3W | Standard | 100V | 2.3A | 195 mOhm @ 2.9A, 10V | 4V @ 10µA | 6.3nC @ 10V | 251pF @ 25V | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A PQFN | 6-VQFN Exposed Pad | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | 2 P-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 2.3A | 170 mOhm @ 3.1A, 10V | 2.4V @ 10µA | 3.7nC @ 10V | 160pF @ 25V | ||||
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VIEW | Infineon Technologies | MOSFET 2N-CH 30V 2.3A 6TSOP | SOT-23-6 Thin, TSOT-23-6 | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSOP6-6 | 0 | 3000 | 2 N-Channel (Dual) | 500mW | Logic Level Gate, 4.5V Drive | 30V | 2.3A | 57 mOhm @ 2.3A, 10V | 2V @ 11µA | 1.6nC @ 5V | 275pF @ 15V | ||||
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VIEW | onsemi | MOSFET 2P-CH 20V 2.3A SSOT-6 | SOT-23-6 Thin, TSOT-23-6 | PowerTrench® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SuperSOT™-6 | 0 | 3000 | 2 P-Channel (Dual) | 700mW | Logic Level Gate | 20V | 2.3A | 115 mOhm @ 2.3A, 4.5V | 1.5V @ 250µA | 7nC @ 4.5V | 467pF @ 10V | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 20V 2.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Logic Level Gate | 20V | 2.3A | 250 mOhm @ 1A, 10V | 3V @ 250µA | 25nC @ 10V | 290pF @ 15V | ||||
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VIEW | Infineon Technologies | MOSFET 2P-CH 30V 2.3A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 P-Channel (Dual) | 2W | Standard | 30V | 2.3A | 250 mOhm @ 1A, 10V | 1V @ 250µA | 12nC @ 10V | 190pF @ 15V | ||||
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VIEW | Diodes Incorporated | MOSFET 2N-CH 30V 2.3A 8-MSOP | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-MSOP | 0 | 1000 | 2 N-Channel (Dual) | 1.04W | Logic Level Gate | 30V | 2.3A | 135 mOhm @ 1.7A, 10V | 1V @ 250µA (Min) | 8nC @ 10V | 290pF @ 25V | ||||
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VIEW | onsemi | MOSFET 2P-CH 20V 2.3A 6-WDFN | 6-WDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-WDFN (2x2) | 0 | 3000 | 2 P-Channel (Dual) | 710mW | Logic Level Gate | 20V | 2.3A | 100 mOhm @ 2A, 4.5V | 1V @ 250µA | 6.2nC @ 4.5V | 531pF @ 10V |