- Manufacture :
- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VIEW | Infineon Technologies | MOSFET 2N-CH 30V 6.6A 8DSO | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-DSO-8 | 0 | 2500 | 2 N-Channel (Dual) | 1.4W | Logic Level Gate | 30V | 6.6A | 20 mOhm @ 7.9A, 10V | 2V @ 13µA | 8nC @ 5V | 1010pF @ 15V | ||||
|
VIEW | Infineon Technologies | MOSFET 2N-CH 20V 6.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | |||||
|
VIEW | onsemi | MOSFET 2N-CH 20V 6.6A 8TSSOP | 8-TSSOP (0.173", 4.40mm Width) | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-TSSOP | 0 | 4000 | 2 N-Channel (Dual) | 1.42W | Logic Level Gate | 20V | 6.6A | 22 mOhm @ 6.6A, 4.5V | 1.2V @ 250µA | 20nC @ 4.5V | 900pF @ 16V | ||||
|
VIEW | Infineon Technologies | MOSFET 2N-CH 20V 6.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V | ||||
|
VIEW | Infineon Technologies | MOSFET 2N-CH 20V 6.6A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | 2 N-Channel (Dual) | 2W | Logic Level Gate | 20V | 6.6A | 29 mOhm @ 6A, 4.5V | 700mV @ 250µA | 27nC @ 4.5V | 900pF @ 15V |