- Manufacture :
- Packaging :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Power - Max | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 1 | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | |||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 60V 4.5A 6TSOP | SOT-23-6 Thin, TSOT-23-6 | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TSOP6-6 | 0 | 3000 | N-Channel | - | 60V | 4.5A (Ta) | 60 mOhm @ 4.5A, 10V | 2.3V @ 15µA | 5.6nC @ 5V | 657pF @ 25V | 4.5V, 10V | ±20V | 2W (Ta) | ||||
|
|
|
4,000
In-stock
|
Infineon Technologies | MOSFET N-CH 100V 4.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | - | 100V | 4.5A (Ta) | 60 mOhm @ 2.7A, 10V | 5.5V @ 250µA | 50nC @ 10V | 930pF @ 25V | 10V | ±30V | 2.5W (Ta) | ||||
|
|
|
VIEW | Diodes Incorporated | MOSFET 2 P-CH 4.5A UDFN2020-6 | 6-UDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | U-DFN2020-6 (Type B) | 0 | 10000 | 2 P-Channel (Dual) | - | Standard | - | 4.5A (Ta) | 50 mOhm @ 2A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V | 752pF @ 15V | |||||||
|
|
|
9,000
In-stock
|
Diodes Incorporated | MOSFET 2 P-CH 20V 4.5A DFN2020-6 | 6-UDFN Exposed Pad | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | U-DFN2020-6 (Type B) | 0 | 3000 | 2 P-Channel (Dual) | 1.54W | Standard | 20V | 4.5A (Ta) | 50 mOhm @ 2A, 4.5V | 1V @ 250µA | 9.1nC @ 4.5V | 752pF @ 15V |
