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- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 2.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 4000 | N-Channel | Schottky Diode (Isolated) | 30V | 2.7A (Ta) | 130 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 2.7A MICRO8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | FETKY™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 4000 | N-Channel | Schottky Diode (Isolated) | 30V | 2.7A (Ta) | 130 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 2.7A MICRO-8 | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) | FETKY™ | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro8™ | 0 | 95 | N-Channel | Schottky Diode (Isolated) | 30V | 2.7A (Ta) | 130 mOhm @ 1.7A, 10V | 1V @ 250µA | 12nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | 1.25W (Ta) | |||
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6,000
In-stock
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Diodes Incorporated | MOSFET N-CH 8V 2.7A X1-WLB0808-4 | 4-XFBGA, WLBGA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | X1-WLB0808-4 | 0 | 3000 | N-Channel | - | 8V | 2.7A (Ta) | 42 mOhm @ 1A, 4.5V | 700mV @ 250µA | 15nC @ 4.5V | 908pF @ 6V | 1.2V, 4.5V | ±5V | 740mW (Ta) | |||
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29,000
In-stock
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Diodes Incorporated | MOSFET N-CH 70V 3.8A SOT-223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 1000 | N-Channel | - | 70V | 2.7A (Ta) | 130 mOhm @ 4.4A, 10V | 1V @ 250µA | 7.4nC @ 10V | 298pF @ 40V | 4.5V, 10V | ±20V | 2W (Ta) | |||
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12,000
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 2.7A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | P-Channel | - | 30V | 2.7A (Ta) | 122 mOhm @ 2.7A, 10V | 2.1V @ 250µA | - | 227pF @ 10V | 4.5V, 10V | ±20V | 1.08W (Ta) | |||
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51,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 2.7A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | P-Channel | - | 20V | 2.7A (Ta) | 100 mOhm @ 2.7A, 4.5V | 1.25V @ 250µA | 5.3nC @ 4.5V | 250pF @ 10V | 2.5V, 4.5V | ±12V | 1.08W (Ta) | |||
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24,000
In-stock
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Infineon Technologies | MOSFET N-CH 30V 2.7A SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | Micro3™/SOT-23 | 0 | 3000 | N-Channel | - | 30V | 2.7A (Ta) | 100 mOhm @ 2.7A, 10V | 2.3V @ 25µA | 1nC @ 4.5V | 110pF @ 15V | 4.5V, 10V | ±20V | 1.3W (Ta) | |||
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3,000
In-stock
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onsemi | MOSFET N-CH 30V 2.7A SSOT-3 | TO-236-3, SC-59, SOT-23-3 | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SuperSOT-3 | 0 | 3000 | N-Channel | - | 30V | 2.7A (Ta) | 46 mOhm @ 2.7A, 10V | 3V @ 250µA | 7nC @ 5V | 480pF @ 10V | 4.5V, 10V | ±20V | 500mW (Ta) |
