- Manufacture :
- Package / Case :
- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 3.1A SOT-224 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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2,541
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | ||||
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20,000
In-stock
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Texas instruments | MOSFET N-CH 30V 3.1A 0402 | 3-XFDFN | FemtoFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 3-PICOSTAR | 0 | 250 | N-Channel | - | 30V | 3.1A (Ta) | 109 mOhm @ 500mA, 8V | 1.1V @ 250µA | 1.35nC @ 4.5V | 195pF @ 15V | 1.8V, 4.5V | 12V | 500mW (Ta) | |||
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130,000
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.1A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | 1W (Ta) | |||
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57,000
In-stock
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Texas instruments | MOSFET N-CH 30V 3.1A 0402 | 3-XFDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 3-PICOSTAR | 0 | 3000 | N-Channel | - | 30V | 3.1A (Ta) | 109 mOhm @ 500mA, 8A | 1.1V @ 250µA | 1.35nC @ 4.5V | 195pF @ 15V | 1.8V, 4.5V | 12V | 500mW (Ta) |
