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- Series :
- Packaging :
- Part Status :
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- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | - | 30V | 9.2A (Ta) | 13.3 mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 10V, 20V | ±25V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | - | 30V | 9.2A (Ta) | 19.4 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 9.2A 8DSO | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | P-DSO-8 | 0 | 2500 | P-Channel | - | 30V | 9.2A (Ta) | 13 mOhm @ 11.3A, 10V | 2.2V @ 140µA | 81nC @ 10V | 3520pF @ 25V | 10V | ±25V | 1.56W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 9.2A 8DSO | 8-SOIC (0.154", 3.90mm Width) | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | P-DSO-8 | 0 | 2500 | P-Channel | - | 30V | 9.2A (Ta) | 13 mOhm @ 11.7A, 10V | 2.2V @ 140µA | 81nC @ 10V | 3520pF @ 25V | 10V | ±25V | 1.56W (Ta) | |||
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VIEW | Diodes Incorporated | MOSFET N-CHA 60V 9.2A SO8 | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 10000 | 2500 | N-Channel | - | 60V | 9.2A (Ta) | 18 mOhm @ 10A, 10V | 2.5V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | 1.5W (Ta) | |||
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8,000
In-stock
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | - | 30V | 9.2A (Ta) | 19.4 mOhm @ 9.2A, 10V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET P-CH 30V 9.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | - | 30V | 9.2A (Ta) | 13.3 mOhm @ 9.2A, 20V | 2.4V @ 25µA | 38nC @ 10V | 1110pF @ 25V | 10V, 20V | ±25V | 2.5W (Ta) | |||
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25,000
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 9.2A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 2500 | N-Channel | - | 60V | 9.2A (Ta) | 18 mOhm @ 10A, 10V | 2.5V @ 250µA | 17nC @ 10V | 864pF @ 30V | 4.5V, 10V | ±20V | 1.5W (Ta) | |||
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21,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 9.2A 6-DFN | 6-PowerUDFN | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | U-DFN2523-6 | 0 | 3000 | P-Channel | - | 20V | 9.2A (Ta) | 16 mOhm @ 3.6A, 4.5V | 1.2V @ 200µA | 113nC @ 10V | 4748pF @ 10V | 1.5V, 4.5V | ±12V | 1W (Ta) | |||
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VIEW | Diodes Incorporated | MOSFET 2 N-CH 9.2A VDFN3030-8 | 8-PowerVDFN | - | Tape & Reel (TR) | Surface Mount | -55°C ~ 150°C (TJ) | Active | V-DFN3030-8 (Type J) | 0 | 10000 | 2 N-Channel (Dual) | Standard | - | 9.2A (Ta) | 20 mOhm @ 11A, 10V | 2V @ 250µA | 11.3nC @ 4.5V | 1415pF @ 15V |
