- Manufacture :
- Series :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 9.4A (Ta) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 48W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 100V 9.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 750 | N-Channel | - | 100V | 9.4A (Ta) | 210 mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 48W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 9.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | - | 40V | 9.4A (Ta) | 15.5 mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | 2460pF @ 20V | 4.5V, 10V | ±12V | 2.5W (Ta) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 9.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | N-Channel | - | 40V | 9.4A (Ta) | 15.5 mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | 2460pF @ 20V | 4.5V, 10V | ±12V | 2.5W (Ta) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 40V 9.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | N-Channel | - | 40V | 9.4A (Ta) | 15.5 mOhm @ 9.4A, 10V | 2V @ 250µA | 34nC @ 4.5V | 2460pF @ 20V | 4.5V, 10V | ±12V | 2.5W (Ta) | |||
|
|
|
24,000
In-stock
|
onsemi | MOSFET P-CH 20V 9.4A MICROFET | 6-VDFN Exposed Pad | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 6-MicroFET (2x2) | 0 | 3000 | P-Channel | - | 20V | 9.4A (Ta) | 20 mOhm @ 9.4A, 4.5V | 1.5V @ 250µA | 29nC @ 4.5V | 2805pF @ 10V | 1.8V, 4.5V | ±8V | 2.4W (Ta) |
