- Manufacture :
- Package / Case :
- Series :
- Operating Temperature :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | STMicroelectronics | MOSFET N-CH 900V 18.5A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SuperMESH5™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | D2PAK | 0 | 1000 | N-Channel | 900V | 18.5A (Tc) | 299 mOhm @ 9A, 10V | 5V @ 100µA | 43nC @ 10V | 1645pF @ 100V | 10V | ±30V | 250W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 18.5A 6PQFN | 6-VDFN Exposed Pad | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | 6-PQFN (2x2) | 0 | 4000 | N-Channel | 60V | 18.5A (Tc) | 17 mOhm @ 11A, 10V | 2.3V @ 10µA | 8nC @ 4.5V | 660pF @ 25V | 4.5V, 10V | ±20V | 11.5W (Tc) |
