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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 4.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount - Obsolete 8-SO 0 4000 P-Channel - 20V 4.3A (Ta) 100 mOhm @ 2A, 10V - 40nC @ 10V 750pF @ 20V - - -
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Infineon Technologies MOSFET P-CH 12V 4.3A SOT-23 TO-236-3, SC-59, SOT-23-3 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro3™/SOT-23 0 1 P-Channel - 12V 4.3A (Ta) 50 mOhm @ 4.3A, 4.5V 950mV @ 250µA 15nC @ 5V 830pF @ 10V 1.8V, 4.5V ±8V 1.3W (Ta)
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