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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET P-CH 30V 760MA SOT-23 TO-236-3, SC-59, SOT-23-3 HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro3™/SOT-23 0 0 1 P-Channel 30V 760mA (Ta) 600 mOhm @ 600mA, 10V 1V @ 250µA 5.1nC @ 10V 75pF @ 25V 4.5V, 10V ±20V 540mW (Ta)
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Per Unit
$0.086
RFQ
10,000
In-stock
Diodes Incorporated MOSFET N-CH 20V 0.76A 3DFN 3-UFDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 3-DFN1006 (1.0x0.6) 100000 0 10000 N-Channel 20V 760mA (Ta) 990 mOhm @ 100mA, 4.5V 1V @ 250µA 0.93nC @ 10V 27.6pF @ 16V 1.5V, 4.5V ±12V 380mW (Ta)
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