- Manufacture :
- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 4000 | N-Channel | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | 1.79W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 2000 | N-Channel | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | 1.79W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 4000 | N-Channel | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | 1.79W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.1A SOT223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | 100V | 1.1A (Ta) | 700 mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | 364pF @ 25V | 4.5V, 10V | ±20V | 1.79W (Ta) | |||
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27,000
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 1.1A SOT23-3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | P-Channel | 30V | 1.1A (Ta) | 350 mOhm @ 600mA, 10V | 1V @ 250µA | 4.8nC @ 10V | 140pF @ 25V | 4.5V, 10V | ±20V | 625mW (Ta) | |||
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21,000
In-stock
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onsemi | MOSFET P-CH 30V 1.1A SSOT3 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SuperSOT-3 | 0 | 3000 | P-Channel | 30V | 1.1A (Ta) | 200 mOhm @ 1.3A, 10V | 2.5V @ 250µA | 4.4nC @ 5V | 280pF @ 10V | 4.5V, 10V | ±20V | 500mW (Ta) |
