- Package / Case :
- Series :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
10 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 2000 | N-Channel | 60V | 2.9A (Ta) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 4000 | N-Channel | 60V | 2.9A (Ta) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | P-Channel | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | P-Channel | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | PG-SOT223-4 | 0 | 4000 | N-Channel | 60V | 2.9A (Ta) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | 1.8W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 60V 2.9A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | PG-SOT223-4 | 0 | 1000 | N-Channel | 60V | 2.9A (Ta) | 120 mOhm @ 2.9A, 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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VIEW | Texas instruments | MOSFET N-CH 12V 3PICOSTAR | 3-XFDFN | FemtoFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 3-PICOSTAR | 0 | 3000 | N-Channel | 12V | 2.9A (Ta) | 44 mOhm @ 500mA, 4.5V | 1.25V @ 250µA | 2.6nC @ 4.5V | 291pF @ 6V | 2.5V, 4.5V | ±10V | 500mW (Ta) | |||
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10,500
In-stock
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Texas instruments | MOSFET N-CH 12V 3PICOSTAR | 3-XFDFN | FemtoFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 3-PICOSTAR | 0 | 250 | N-Channel | 12V | 2.9A (Ta) | 44 mOhm @ 500mA, 4.5V | 1.25V @ 250µA | 2.6nC @ 4.5V | 291pF @ 6V | 2.5V, 4.5V | ±10V | 500mW (Ta) | |||
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3,000
In-stock
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Infineon Technologies | MOSFET P-CH 60V 2.9A SOT-223 | TO-261-4, TO-261AA | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-SOT223-4 | 0 | 1000 | P-Channel | 60V | 2.9A (Ta) | 130 mOhm @ 2.9A, 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | 10V | ±20V | 1.8W (Ta) | |||
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13,000
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 2.9A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 1000 | N-Channel | 100V | 2.9A (Ta) | 125 mOhm @ 2.9A, 10V | 4V @ 250µA | 17nC @ 10V | 859pF @ 50V | 10V | ±20V | 2W (Ta) |
