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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.680
RFQ
3,057
In-stock
Infineon Technologies MOSFET N-CH 100V 7.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) 8-SO 0 1 N-Channel - 100V 7.3A (Ta) 22 mOhm @ 4.4A, 10V 4V @ 250µA 51nC @ 10V 1530pF @ 25V 10V ±20V 2.5W (Ta)
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VIEW
RFQ
Infineon Technologies MOSFET N-CH 100V 7.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SO 0 4000 N-Channel - 100V 7.3A (Ta) 22 mOhm @ 4.4A, 10V 4V @ 250µA 51nC @ 10V 1530pF @ 25V 10V ±20V 2.5W (Ta)
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Per Unit
$0.600
VIEW
RFQ
Infineon Technologies MOSFET N-CH 100V 7.3A 8-SOIC 8-SOIC (0.154", 3.90mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 4000 N-Channel - 100V 7.3A (Ta) 22 mOhm @ 4.4A, 10V 4V @ 250µA 51nC @ 10V 1530pF @ 25V 10V ±20V 2.5W (Ta)
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Per Unit
$0.286
RFQ
9,000
In-stock
onsemi MOSFET P-CH 20V 7.3A MLP2X2 6-VDFN Exposed Pad PowerTrench® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 6-MicroFET (2x2) 0 3000 P-Channel - 20V 7.3A (Ta) 30 mOhm @ 7.3A, 4.5V 1.5V @ 250µA 20nC @ 4.5V 1645pF @ 10V 2.5V, 4.5V ±12V 2.4W (Ta)
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