- Series :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
11 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 5.4A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | 30V | 5.4A (Ta) | 59 mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | 386pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 5.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | N-Channel | 100V | 5.4A (Ta) | 39 mOhm @ 3.2A, 10V | 4V @ 250µA | 56nC @ 10V | 1720pF @ 25V | 10V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 20V 5.4A 8SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Not For New Designs | 8-SO | 0 | 4000 | P-Channel | 20V | 5.4A (Ta) | 60 mOhm @ 5.4A, 4.5V | 1.6V @ 250µA | 22nC @ 4.5V | 780pF @ 15V | 2.7V, 4.5V | ±12V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 5.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | N-Channel | 100V | 5.4A (Ta) | 39 mOhm @ 3.2A, 10V | 4V @ 250µA | 56nC @ 10V | 1720pF @ 25V | 10V | ±20V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 30V 5.4A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | 30V | 5.4A (Ta) | 59 mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14nC @ 10V | 386pF @ 25V | 4.5V, 10V | ±20V | 2.5W (Ta) | |||
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VIEW | Texas instruments | MOSFET P-CH 12V | 3-XFDFN | FemtoFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 3-PICOSTAR | 0 | 3000 | P-Channel | 12V | 5.4A (Ta) | 35 mOhm @ 1A, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | 628pF @ 6V | 1.5V, 4.5V | -6V | 500mW (Ta) | |||
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2,500
In-stock
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onsemi | MOSFET N-CH 60V 5.4A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | PowerTrench® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | TO-252-3 | 0 | 2500 | N-Channel | 60V | 5.4A (Ta) | 55 mOhm @ 5.4A, 10V | 3V @ 250µA | 11nC @ 10V | 660pF @ 30V | 6V, 10V | ±20V | 3.8W (Ta), 42W (Tc) | |||
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10,000
In-stock
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Diodes Incorporated | MOSFET N-CH 40V 5.4A 8SO | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SOP | 0 | 2500 | N-Channel | 40V | 5.4A (Ta) | 34 mOhm @ 6A, 10V | 3V @ 250µA | 10nC @ 10V | 453pF @ 20V | 4.5V, 10V | ±20V | 1.56W (Ta) | |||
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17,250
In-stock
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Texas instruments | 12V P-CHANNEL FEMTOFET MOSFET | 3-XFDFN | FemtoFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 3-PICOSTAR | 0 | 250 | P-Channel | 12V | 5.4A (Ta) | 35 mOhm @ 1A, 4.5V | 950mV @ 250µA | 4.2nC @ 4.5V | 628pF @ 6V | 1.5V, 4.5V | -6V | 500mW (Ta) | |||
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31,000
In-stock
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Diodes Incorporated | MOSFET N-CH 60V 6.9A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 1000 | N-Channel | 60V | 5.4A (Ta) | 40 mOhm @ 8.2A, 10V | 3V @ 250µA | 24.2nC @ 5V | 1407pF @ 40V | 10V | ±20V | 2W (Ta) | |||
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6,000
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 4.6A SOT223 | TO-261-4, TO-261AA | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 1000 | P-Channel | 30V | 5.4A (Ta) | 45 mOhm @ 4.2A, 10V | 1V @ 250µA | 29.6nC @ 10V | 1022pF @ 15V | 4.5V, 10V | ±20V | 2W (Ta) |
