- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 1000 | N-Channel | - | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 110W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 110W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 47A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 100V | 47A (Tc) | 26 mOhm @ 33A, 10V | 2V @ 2mA | 135nC @ 10V | 2500pF @ 25V | 4.5V, 10V | ±20V | 175W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CHANNEL 60V 47A 8TDSON | 8-PowerTDFN | OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-TDSON-8 | 0 | 5000 | N-Channel | - | 60V | 47A (Tc) | 9.4 mOhm @ 24A, 10V | 2.3V @ 14µA | 9.4nC @ 4.5V | 1300pF @ 30V | 4.5V, 10V | ±20V | 36W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 47A TO263-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | SIPMOS® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Not For New Designs | PG-TO263-3-2 | 0 | 1000 | N-Channel | - | 100V | 47A (Tc) | 33 mOhm @ 33A, 10V | 4V @ 2mA | 105nC @ 10V | 2500pF @ 25V | 10V | ±20V | 175W (Tc) | |||
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800
In-stock
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Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 110W (Tc) | |||
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1,700
In-stock
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Infineon Technologies | MOSFET NCH 650V 135A PG-HDSOP-10 | 10-PowerSOP Module | CoolMOS™ G7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | PG-HDSOP-10-1 | 0 | 1700 | N-Channel | - | 600V | 47A (Tc) | 50 mOhm @ 15.9A, 10V | 4V @ 800µA | 68nC @ 10V | 2670pF @ 400V | 10V | ±20V | 278W (Tc) |
