- Manufacture :
- Package / Case :
- Series :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- FET Type :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 40V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 3200 | N-Channel | - | 40V | 104A (Tc) | 8 mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | 4.5V, 10V | ±16V | 2.4W (Ta), 167W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 350 | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 3200 | N-Channel | - | 40V | 104A (Tc) | 8 mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | 4.5V, 10V | ±16V | 2.4W (Ta), 167W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 40V | 104A (Tc) | 8 mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | 4.5V, 10V | ±16V | 2.4W (Ta), 167W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 40V | 104A (Tc) | 8 mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | 4.5V, 10V | ±16V | 2.4W (Ta), 167W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 40V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 40V | 104A (Tc) | 8 mOhm @ 62A, 10V | 1V @ 250µA | 68nC @ 4.5V | 3445pF @ 25V | 4.5V, 10V | ±16V | 2.4W (Ta), 167W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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800
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D2PAK | 0 | 800 | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | 3.8W (Ta), 200W (Tc) | |||
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7,500
In-stock
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Texas instruments | MOSFET P-CH 20V 104A 8VSON | 8-PowerVDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSON (3.3x3.3) | 0 | 2500 | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | 2.8W (Ta), 96W (Tc) | |||
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18,750
In-stock
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Texas instruments | MOSFET P-CH 20V 104A 8VSON | 8-PowerVDFN | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-VSON (3.3x3.3) | 0 | 250 | P-Channel | - | 20V | 104A (Tc) | 6.5 mOhm @ 10A, 4.5V | 1.15V @ 250µA | 14.1nC @ 4.5V | 2120pF @ 10V | 1.8V, 4.5V | ±12V | 2.8W (Ta), 96W (Tc) |
