- Package / Case :
- Series :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Power Dissipation (Max) :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 3200 | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | 57W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 3200 | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | 57W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | 57W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 800 | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | 57W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 20V 39A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 20V | 39A (Tc) | 20 mOhm @ 23A, 7V | 700mV @ 250µA | 31nC @ 4.5V | 1300pF @ 15V | 4.5V, 7V | ±10V | 57W (Tc) | |||
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3,000
In-stock
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Infineon Technologies | MOSFET N-CH 4VSON | 4-PowerTSFN | CoolMOS™ P7 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | PG-VSON-4 | 0 | 3000 | N-Channel | - | 650V | 39A (Tc) | 85 mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | 2180pF @ 400V | 10V | ±20V | 154W (Tc) |
