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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 75V 170A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) D2PAK 0 1 N-Channel - 75V 170A (Tc) 4.5 mOhm @ 75A, 10V 4V @ 250µA 260nC @ 10V 7600pF @ 50V 10V ±20V 300W (Tc)
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Per Unit
$0.983
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Infineon Technologies MOSFET N-CH 25V 170A WDSON 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 25V 170A (Tc) 1.2 mOhm @ 30A, 10V 2V @ 250µA 82nC @ 10V 5852pF @ 12V 4.5V, 10V ±20V 2.8W (Ta), 57W (Tc)
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Per Unit
$4.120
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Infineon Technologies MOSFET N-CH 40V 170A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tube MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Not For New Designs D2PAK 0 1 N-Channel - 40V 170A (Tc) 3.6 mOhm @ 130A, 10V 4V @ 250µA 200nC @ 10V 5890pF @ 25V 10V ±20V 200W (Tc)
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Per Unit
$2.011
RFQ
800
In-stock
Infineon Technologies MOSFET N-CH 75V 170A D2PAK TO-263-3, D²Pak (2 Leads + Tab), TO-263AB HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active D2PAK 0 800 N-Channel - 75V 170A (Tc) 4.5 mOhm @ 75A, 10V 4V @ 250µA 260nC @ 10V 7600pF @ 50V 10V ±20V 300W (Tc)
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