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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
Power Dissipation (Max) :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-SOT223-4 0 0 1000 N-Channel 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Infineon Technologies MOSFET N-CH 500V 400MA SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) PG-SOT223-4 0 0 1000 N-Channel 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Per Unit
$0.667
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RFQ
Infineon Technologies MOSFET N-CH 500V 0.4A SOT-223 TO-261-4, TO-261AA SIPMOS® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-SOT223-4 0 0 1000 N-Channel 500V 400mA (Ta) 4 Ohm @ 400mA, 10V 4V @ 1mA - 400pF @ 25V 10V ±20V 1.8W (Ta)
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Per Unit
$0.085
RFQ
10,000
In-stock
Diodes Incorporated MOSFET P-CH 30V 0.4A 3-UFDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active X1-DFN1006-3 240000 0 10000 P-Channel 30V 400mA (Ta) 2.4 Ohm @ 200mA, 10V 2.3V @ 250µA 4nC @ 10V 100pF @ 15V 4.5V, 10V ±25V 500mW (Ta)
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