- Series :
- Packaging :
- Operating Temperature :
- Part Status :
- Supplier Device Package :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 650V 8.7A TO263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | CoolMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | D²PAK (TO-263AB) | 0 | 1000 | N-Channel | - | 650V | 8.7A (Tc) | 420 mOhm @ 3.4A, 10V | 4.5V @ 340µA | 32nC @ 10V | 870pF @ 100V | 10V | ±20V | 83.3W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 25µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 3000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 25µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 6000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 3000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 2000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D-PAK | 0 | 75 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | |||
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26
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 1 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) | ||||
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6,000
In-stock
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Infineon Technologies | MOSFET N-CH 100V 8.7A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 2000 | N-Channel | - | 100V | 8.7A (Tc) | 190 mOhm @ 5.2A, 10V | 4V @ 250µA | 10nC @ 10V | 310pF @ 25V | 10V | ±20V | 35W (Tc) |
