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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | @ qty | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 0 | 3800 | N-Channel | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 0 | 4000 | N-Channel | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 10.8A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 0 | 4000 | N-Channel | 30V | 10.8A (Ta) | 14 mOhm @ 15A, 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | 4.5V | ±20V | 2.5W (Ta) | |||
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5,000
In-stock
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Diodes Incorporated | MOSFET BVDSS: 41V 60V,SO-8,T&R,2 | 8-SOIC (0.154", 3.90mm Width) | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 5000 | 0 | 2500 | N-Channel | 60V | 10.8A (Ta) | 9.5 mOhm @ 13.5A, 10V | 2V @ 250µA | 33.5nC @ 10V | 1925pF @ 30V | 4.5V, 10V | ±20V | 1.25W (Ta) |
