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Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.402
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RFQ
Infineon Technologies MOSFET N-CH 80V 40A 8TSDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8-FL 0 5000 N-Channel 80V 40A (Tc) 11 mOhm @ 20A, 10V 3.8V @ 22µA 18.5nC @ 10V 1300pF @ 40V 6V, 10V ±20V 50W (Tc)
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Per Unit
$0.316
RFQ
45,000
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 8-PowerVDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 0 5000 N-Channel 60V 20A (Tc) 11 mOhm @ 20A, 10V 4V @ 23µA 33nC @ 10V 2700pF @ 30V 10V ±20V 2.1W (Ta), 50W (Tc)
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Per Unit
$0.131
RFQ
92,000
In-stock
Diodes Incorporated MOSFET N-CH 30V 10.5A PWRDI3333 8-PowerWDFN - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PowerDI3333-8 0 2000 N-Channel 30V 10.5A (Ta) 11 mOhm @ 20A, 10V 2.5V @ 250µA 26.7nC @ 10V 1281pF @ 15V 4.5V, 10V ±20V 900mW (Ta)
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