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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock @ qty Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.090
RFQ
9,000
In-stock
Diodes Incorporated MOSFET N-CHA 100V 700MA SOT23 TO-236-3, SC-59, SOT-23-3 Automotive, AEC-Q101 Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23 0 0 3000 N-Channel   - 100V 700mA (Ta) 700 mOhm @ 1.5A, 10V 4V @ 250µA 4.6nC @ 10V 235pF @ 50V 6V, 10V ±20V 400mW (Ta)
ZXMN10A07ZTA
Per Unit
$0.269
RFQ
9,000
In-stock
Diodes Incorporated MOSFET N-CH 100V 1A SOT-89 TO-243AA - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-89-3 0 0 1000 N-Channel   - 100V 1A (Ta) 700 mOhm @ 1.5A, 10V 4V @ 250µA 2.9nC @ 10V 138pF @ 50V 6V, 10V ±20V 1.5W (Ta)
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Per Unit
$0.877
RFQ
9,000
In-stock
Diodes Incorporated MOSFET 2N/2P-CH 100V 1A/0.8A SM8 SOT-223-8 - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active SM8 18000 0 1000 2 N and 2 P-Channel (H-Bridge) 1.3W Standard 100V 1A, 800mA 700 mOhm @ 1.5A, 10V 4V @ 250µA 2.9nC @ 10V 138pF @ 60V      
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Per Unit
$1.000
RFQ
2,500
In-stock
Diodes Incorporated MOSFET 2N/2P-CH 100V 8-SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-SOP 15000 0 2500 2 N and 2 P-Channel (H-Bridge) 870mW Standard 100V 800mA, 680mA 700 mOhm @ 1.5A, 10V 4V @ 250µA 2.9nC @ 10V 138pF @ 60V      
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