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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 20V 8.2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 4000 P-Channel   - 20V 8.2A (Ta) 20 mOhm @ 7A, 4.5V 1.2V @ 250µA 45nC @ 5V 2520pF @ 10V 2.5V, 4.5V ±12V 1.8W (Ta)
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Infineon Technologies MOSFET P-CH 20V 8.2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 1 P-Channel   - 20V 8.2A (Ta) 20 mOhm @ 7A, 4.5V 1.2V @ 250µA 45nC @ 5V 2520pF @ 10V 2.5V, 4.5V ±12V 1.8W (Ta)
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Infineon Technologies MOSFET P-CH 20V 8.2A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tube MOSFET (Metal Oxide) Surface Mount - Obsolete Micro8™ 0 80 P-Channel   - 20V 8.2A (Ta) 20 mOhm @ 7A, 4.5V 1.2V @ 250µA 45nC @ 5V 2520pF @ 10V 2.5V, 4.5V ±12V 1.8W (Ta)
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$0.359
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Diodes Incorporated MOSFET N/P-CH 20V 7.8A/6.3A 8SO 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 N and P-Channel 1.8W Logic Level Gate 20V 7.8A, 6.3A 20 mOhm @ 7A, 4.5V 1.5V @ 250µA 11.6nC @ 4.5V 1149pF @ 10V      
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