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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.100
RFQ
10,000
In-stock
Diodes Incorporated MOSFET N-CH 30V 4A SOT323 SC-70, SOT-323 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-323 0 10000 N-Channel   - 30V 4A (Ta) 52 mOhm @ 4A, 10V 1.5V @ 250µA 11.7nC @ 10V 465pF @ 15V 2.5V, 10V ±12V 770mW (Ta)
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Per Unit
$0.106
RFQ
123,000
In-stock
Diodes Incorporated MOSFET N-CH 30V 4A SOT23 TO-236-3, SC-59, SOT-23-3 - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active SOT-23 0 3000 N-Channel   - 30V 4A (Ta) 52 mOhm @ 4A, 10V 1.4V @ 250µA 11.7nC @ 10V 464pF @ 15V 2.5V, 10V ±12V 1.4W (Ta)
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RFQ
onsemi MOSFET 2P-CH 30V 4A 8SOIC 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-SOIC 0 2500 2 P-Channel (Dual) 900mW Logic Level Gate 30V 4A 52 mOhm @ 4A, 10V 3V @ 250µA 27nC @ 10V 730pF @ 15V      
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