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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type Power - Max FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET P-CH 30V 3.6A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete Micro8™ 0 4000 P-Channel   - 30V 3.6A (Ta) 90 mOhm @ 2.4A, 10V 1V @ 250µA 30nC @ 10V 520pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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Per Unit
$0.263
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Infineon Technologies MOSFET P-CH 30V 3.6A MICRO8 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active Micro8™ 0 4000 P-Channel   - 30V 3.6A (Ta) 90 mOhm @ 2.4A, 10V 1V @ 250µA 30nC @ 10V 520pF @ 25V 4.5V, 10V ±20V 1.8W (Ta)
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onsemi MOSFET N/P-CH 30V/12V SSOT-6 SOT-23-6 Thin, TSOT-23-6 PowerTrench®, SyncFET™ Tape & Reel (TR)   Surface Mount -55°C ~ 150°C (TJ) Obsolete SuperSOT™-6 0 3000 N and P-Channel 700mW Logic Level Gate 30V, 12V 2.4A, 2.5A 90 mOhm @ 2.4A, 10V 3V @ 1mA 3.5nC @ 5V 270pF @ 15V      
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