Build a global manufacturer and supplier trusted trading platform.
Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
Default Photo
Per Unit
$0.783
RFQ
2,500
In-stock
Diodes Incorporated MOSFET N-CHA 60V 13.5A SO8 8-SOIC (0.154", 3.90mm Width) - Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-SO 0 2500 N-Channel - 60V 13.5A (Ta) 6 mOhm @ 20A, 10V 3V @ 250µA 47.1nC @ 10V 2962pF @ 30V 4.5V, 10V ±20V 1.3W (Ta)
Default Photo
Per Unit
$0.288
RFQ
25,000
In-stock
Infineon Technologies MOSFET N-CH 25V 12A TSDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8-FL 0 5000 N-Channel - 25V 12A (Ta), 40A (Tc) 6 mOhm @ 20A, 10V 2V @ 250µA 9.1nC @ 10V 670pF @ 12V 4.5V, 10V ±20V 2.1W (Ta), 26W (Tc)
Page 1 / 1