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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 30V 2.3A 6-TSOP | SOT-23-6 | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | Micro6™(SOT23-6) | 0 | 1 | P-Channel | - | 30V | 2.3A (Ta) | 200 mOhm @ 1.6A, 10V | 1V @ 250µA | 11nC @ 10V | 170pF @ 25V | 4.5V, 10V | ±20V | 1.7W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Cut Tape (CT) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | |||
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1,296
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | SOT-223 | 0 | 1 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) | ||||
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22,500
In-stock
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Infineon Technologies | MOSFET N-CH 100V 1.6A SOT223 | TO-261-4, TO-261AA | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-223 | 0 | 2500 | N-Channel | - | 100V | 1.6A (Ta) | 200 mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | 330pF @ 25V | 10V | ±20V | 1W (Ta) |
