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Supplier Device Package :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.343
VIEW
RFQ
Infineon Technologies MOSFET N-CH 60V 40A 8TSDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8-FL 0 5000 N-Channel - 60V 40A (Tc) 10 mOhm @ 20A, 10V 3.3V @ 14µA 15nC @ 10V 1075pF @ 30V 6V, 10V ±20V 2.1W (Ta), 36W (Tc)
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Per Unit
$0.278
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 0 5000 N-Channel - 30V 12A (Ta), 40A (Tc) 10 mOhm @ 20A, 10V 2.2V @ 250µA 17nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V 2.1W (Ta), 30W (Tc)
100N06LS
5+
$1.000
50+
$0.800
RFQ
8,925
In-stock
Infineon Technologies MOSFET N-CH 60V 20A TSDSON-8 8-PowerVDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8 0 5000 N-Channel - 60V 11A (Ta), 20A (Tc) 10 mOhm @ 20A, 10V 2.2V @ 23µA 45nC @ 10V 3500pF @ 30V 4.5V, 10V ±20V 2.1W (Ta), 50W (Tc)
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