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Supplier Device Package :
Minimum Quantity :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Power Dissipation (Max) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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RFQ
Infineon Technologies MOSFET N-CH 30V 20A PQFN56 8-PowerTDFN HEXFET® Cut Tape (CT) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete 8-PQFN (5x6) 0 1 N-Channel - 30V 20A (Ta), 54A (Tc) 4.8 mOhm @ 20A, 10V 2.35V @ 50µA 26nC @ 4.5V 2360pF @ 15V 4.5V, 10V ±20V 3.1W (Ta)
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Per Unit
$0.385
VIEW
RFQ
Infineon Technologies MOSFET N-CH 30V 20A PQFN 8-PowerTDFN HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active 8-PQFN (5x6) 0 4000 N-Channel - 30V 20A (Ta), 54A (Tc) 4.8 mOhm @ 20A, 10V 2.35V @ 50µA 26nC @ 4.5V 2360pF @ 15V 4.5V, 10V ±20V 3.1W (Ta)
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Per Unit
$0.370
RFQ
10,000
In-stock
Infineon Technologies MOSFET N-CH 8TDSON 8-PowerVDFN Automotive, AEC-Q101, OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 175°C (TJ) Active PG-TSDSON-8 0 5000 N-Channel - 40V 40A (Tc) 4.8 mOhm @ 20A, 10V 2V @ 17µA 29nC @ 10V 1560pF @ 25V 4.5V, 10V ±16V 48W (Tc)
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