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Supplier Device Package :
Minimum Quantity :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$0.528
RFQ
8,000
In-stock
Infineon Technologies MOSFET N CH 30V 32A PQFN5X6 8-TQFN Exposed Pad HEXFET® Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PQFN (5x6) 0 4000 N-Channel - 30V 32A (Ta), 169A (Tc) 2.1 mOhm @ 20A, 10V 2.35V @ 100µA 66nC @ 10V 4960pF @ 10V 4.5V, 10V ±20V 3.6W (Ta), 96W (Tc)
Default Photo
Per Unit
$0.530
RFQ
5,000
In-stock
Infineon Technologies MOSFET N-CH 30V 40A TSDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8-FL 0 5000 N-Channel Schottky Diode (Body) 30V 25A (Ta), 40A (Tc) 2.1 mOhm @ 20A, 10V 2.2V @ 250µA 41nC @ 10V 2600pF @ 15V 4.5V, 10V ±20V 2.1W (Ta), 69W (Tc)
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