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Drain to Source Voltage (Vdss) :
Vgs(th) (Max) @ Id :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Infineon Technologies MOSFET N-CH 30V 95A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Obsolete PG-TDSON-8 0 5000 N-Channel - 30V 20A (Ta), 95A (Tc) 4.2 mOhm @ 50A, 10V 2V @ 50µA 28nC @ 5V 3660pF @ 15V 4.5V, 10V ±20V 2.8W (Ta), 62.5W (Tc)
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Infineon Technologies MOSFET N-CH 30V 50A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) PG-TDSON-8 0 5000 N-Channel - 30V 20A (Ta), 50A (Tc) 4.2 mOhm @ 50A, 10V 2V @ 50µA 28nC @ 5V 3660pF @ 15V 4.5V, 10V ±20V -
BSC042NE7NS3 G
Per Unit
$1.170
RFQ
45,600
In-stock
Infineon Technologies MOSFET N-CH 75V 100A TDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 75V 19A (Ta), 100A (Tc) 4.2 mOhm @ 50A, 10V 3.8V @ 91µA 69nC @ 10V 4800pF @ 37.5V 10V ±20V 2.5W (Ta), 125W (Tc)
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