- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 61A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D2PAK | 0 | 400 | N-Channel | - | 55V | 61A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK | 0 | 450 | N-Channel | - | 55V | 42A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 61A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 1000 | N-Channel | - | 55V | 61A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | D-PAK (TO-252AA) | 0 | 3000 | N-Channel | - | 55V | 42A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | ||||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 61A D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Obsolete | D2PAK | 0 | 50 | N-Channel | - | 55V | 61A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 3000 | N-Channel | - | 55V | 42A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | |||
|
|
|
VIEW | Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK | 0 | 6000 | N-Channel | - | 55V | 42A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) | |||
|
|
|
6,000
In-stock
|
Infineon Technologies | MOSFET N-CH 55V 42A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | D-PAK (TO-252AA) | 0 | 3000 | N-Channel | - | 55V | 42A (Tc) | 11 mOhm @ 37A, 10V | 4V @ 50µA | 60nC @ 10V | 1720pF @ 25V | 10V | ±20V | 91W (Tc) |
