- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
- Applied Filters :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | Automotive, AEC-Q101, OptiMOS™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 175°C (TJ) | Active | PG-TO252-3-313 | 0 | 2500 | N-Channel | - | 250V | 5A (Tc) | 430 mOhm @ 5A, 10V | 4V @ 13µA | 6.2nC @ 10V | 422pF @ 25V | 10V | ±20V | 41W (Tc) | |||
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VIEW | STMicroelectronics | MOSFET N-CH 650V 10A DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 | MDmesh™ M2 | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | 150°C (TJ) | Active | DPAK | 0 | 2500 | N-Channel | - | 650V | 10A (Tc) | 430 mOhm @ 5A, 10V | 4V @ 250µA | 17nC @ 10V | 590pF @ 100V | 10V | ±25V | 110W (Tc) |
