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Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Drive Voltage (Max Rds On, Min Rds On) :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Package / Case Series Packaging Technology Mounting Type Operating Temperature Part Status Supplier Device Package Factory Stock Minimum Quantity FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max) Power Dissipation (Max)
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Per Unit
$1.073
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RFQ
Infineon Technologies MOSFET N-CH 60V 22A WDSON-2 3-WDSON OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -40°C ~ 150°C (TJ) Active MG-WDSON-2, CanPAK M™ 0 5000 N-Channel - 60V 22A (Ta), 90A (Tc) 2.8 mOhm @ 30A, 10V 4V @ 102µA 143nC @ 10V 12000pF @ 30V 10V ±20V 2.2W (Ta), 78W (Tc)
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Per Unit
$0.457
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Infineon Technologies MOSFET N-CH 30V 100A 8TDSON 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TDSON-8 0 5000 N-Channel - 30V 23A (Ta), 100A (Tc) 2.8 mOhm @ 30A, 10V 2V @ 10mA 32nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 48W (Tc)
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Per Unit
$0.444
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Infineon Technologies MOSFET N-CH 30V 21A TSDSON-8 8-PowerTDFN OptiMOS™ Tape & Reel (TR) MOSFET (Metal Oxide) Surface Mount -55°C ~ 150°C (TJ) Active PG-TSDSON-8-FL 0 5000 N-Channel - 30V 21A (Ta), 40A (Tc) 2.8 mOhm @ 30A, 10V 2V @ 250µA 24nC @ 10V 1500pF @ 15V 4.5V, 10V ±20V 2.5W (Ta), 48W (Tc)
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