- Package / Case :
- Part Status :
- Supplier Device Package :
- FET Feature :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET N-CH 25V DIRECTFET MX | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 4800 | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 200A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | 4420pF @ 13V | 4.5V, 10V | ±20V | 2.8W (Ta), 100W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 1000 | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | 6190pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MT | 0 | 1000 | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | DirectFET™ Isometric MT | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MT | 0 | 4800 | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 150µA | 77nC @ 4.5V | 6140pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 25V 32A DIRECTFET-MX | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Obsolete | DIRECTFET™ MX | 0 | 1000 | N-Channel | Schottky Diode (Body) | 25V | 32A (Ta), 200A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 47nC @ 4.5V | 4420pF @ 13V | 4.5V, 10V | ±20V | 2.8W (Ta), 100W (Tc) | |||
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VIEW | Infineon Technologies | MOSFET N-CH 30V 32A DIRECTFET | DirectFET™ Isometric MX | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -40°C ~ 150°C (TJ) | Active | DIRECTFET™ MX | 0 | 4800 | N-Channel | - | 30V | 32A (Ta), 180A (Tc) | 1.7 mOhm @ 32A, 10V | 2.35V @ 100µA | 74nC @ 4.5V | 6190pF @ 15V | 4.5V, 10V | ±20V | 2.8W (Ta), 89W (Tc) |
