- Series :
- Packaging :
- Part Status :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Power Dissipation (Max) :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Package / Case | Series | Packaging | Technology | Mounting Type | Operating Temperature | Part Status | Supplier Device Package | Factory Stock | Minimum Quantity | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Power Dissipation (Max) | |
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VIEW | Infineon Technologies | MOSFET P-CH 12V 16A 8-SO | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 3800 | P-Channel | 12V | 16A (Ta) | 7 mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | 8676pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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VIEW | Texas instruments | MOSFET P-CH 20V 5A 6SON | 6-SMD, Flat Leads | NexFET™ | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 6-SON | 0 | 3000 | P-Channel | 20V | 5A (Tc) | 49 mOhm @ 3A, 4.5V | 900mV @ 250µA | 3.4nC @ 4.5V | 350pF @ 10V | 1.8V, 4.5V | ±8V | 2.4W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 8.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4085 | P-Channel | 12V | 8.9A (Ta) | 24 mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 11.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 3800 | P-Channel | 12V | 11.5A (Tc) | 14 mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 8.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | 12V | 8.9A (Ta) | 24 mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 16A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | 8-SO | 0 | 0 | P-Channel | 12V | 16A (Ta) | 7 mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | 8676pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | ||||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 8.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | 12V | 8.9A (Ta) | 24 mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 11.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 4000 | P-Channel | 12V | 11.5A (Tc) | 14 mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 8.9A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | 12V | 8.9A (Ta) | 24 mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | 1877pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 11.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tube | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Obsolete | 8-SO | 0 | 95 | P-Channel | 12V | 11.5A (Tc) | 14 mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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VIEW | Infineon Technologies | MOSFET P-CH 12V 16A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | 12V | 16A (Ta) | 7 mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | 8676pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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4,000
In-stock
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Infineon Technologies | MOSFET P-CH 12V 16A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | 12V | 16A (Ta) | 7 mOhm @ 16A, 4.5V | 900mV @ 250µA | 91nC @ 4.5V | 8676pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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8,000
In-stock
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Infineon Technologies | MOSFET P-CH 12V 11.5A 8-SOIC | 8-SOIC (0.154", 3.90mm Width) | HEXFET® | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | 8-SO | 0 | 4000 | P-Channel | 12V | 11.5A (Tc) | 14 mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | 3529pF @ 10V | 1.8V, 4.5V | ±8V | 2.5W (Ta) | |||
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123,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 3.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | P-Channel | 20V | 3.2A (Ta) | 80 mOhm @ 1.5A, 4.5V | 900mV @ 250µA | - | 627pF @ 10V | 1.8V, 4.5V | ±12V | 1.4W (Ta) | |||
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423,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 4.2A SOT-23 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23-3 | 0 | 3000 | P-Channel | 20V | 4.2A (Ta) | 60 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 7.6nC @ 4.5V | 727pF @ 20V | 1.8V, 4.5V | ±8V | 1.4W (Ta) | |||
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258,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 4.2A SOT23 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | 0 | 3000 | P-Channel | 20V | 4.2A (Ta) | 52 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.2nC @ 4.5V | 808pF @ 15V | 1.8V, 4.5V | ±8V | 1.4W (Ta) | |||
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540,000
In-stock
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Diodes Incorporated | MOSFET P-CH 20V 4.2A SOT23 | TO-236-3, SC-59, SOT-23-3 | - | Tape & Reel (TR) | MOSFET (Metal Oxide) | Surface Mount | -55°C ~ 150°C (TJ) | Active | SOT-23 | 0 | 10000 | P-Channel | 20V | 4.2A (Ta) | 52 mOhm @ 4.2A, 4.5V | 900mV @ 250µA | 10.2nC @ 4.5V | 808pF @ 15V | 1.8V, 4.5V | ±8V | 1.4W (Ta) |
